Ahhh... Mitchell again..
(always 2 or 3 projects going on simultaneously..)

1. I presume you are familiar with single BJT CE amp (like Q2 stage) maximum gain in conjunction with power supply margins..
For your info, a directly grounded Emitter (in the mean of no R8/R9) can't exhibit gain more than 20 X PS voltage (ideally..!!)
(actually much less due to next stage impedance Collector loading..)
For particular Q2 stage, R10 severely dominates R11 so gain can't be higher than X10(*)..!!
(far away from X200)
2. As Paul pointed above, Q1 bias point should be OK for a Mosfet but not so good for a JFET..
About 4V on Gate call for 5.5V (say) on Source, hence 5.5mA channel current..
I'm pretty sure that Drain can't handle 55V drop..

(minor note is R5/R6 high values)
(*) brute analysis:
For Q2 Collector sitting at 4.5V, quiescent current should be 450μΑ, hence intrinsic Emitter resistor about 55R..
The above resistor is added in series with R8 & R9 equivalent parallel resistance (43R)..
Q2 stage gain is [R11 // (R10+diode dynamic resistance) / (55 + 43)]..
(less than 1000 divided by less than 100..)
