As this appears to be most likely directed at me, I will 'arrogantly' assume that the gauntlet has been tossed and skip the niceties entirely:
- 'Arrogance' is showing an unwarranted importance out of overbearing pride. How can stating a proven scientific fact, no matter how forcefully, be 'arrogant'? The CORRECT use would be to say that it is arrogant to assume that because what you are doing 'works', according to your own definition of 'works', it supersedes proven scientific fact.
- I never called a trimmer on the drain a 'parlor trick', I called it wrong. No need for 'marketing' any other version in when compared to that.
- How do you know a drain trimmer 'does the job' in a circuit, if by simply adjusting it you completely change the circuit's 'job' entirely?? In fact, with each twist of the trim you change the entire circuit itself.
- JFETs don't follow a strict 'square-law'. See Shockley's proof. The 'square-law' just happens to be a good approximation. This goes even more so for short channel JFETs like the J201. A MPF102 is probably closer to a square law approximation than any other of the 'common' JFET types normally used in FX.
- Qualifying designs through limiting the operation of the JFET, and the subsequent formulas used, to only the saturation region is convenient, but is simply not in the slightest bit realistic for our purposes. Unless a JFET stage is used EXCLUSIVELY to be as 'clean' a boost as possible, which, as we are talking about JFETs used in distortion circuits, ain't the case, one HAS TO consider the operation of the JFET in the ohmic region. To ignore this is to limit one's study of the distortion created in a JFET to the hard clip that occurs against the source resistor and completely ignores the 'squashing' that occurs when the signal causes the JFET to operate in the ohmic region - in my opinion the entire raison d'etre for using JFETs in the first place - why the hell else deal with the characteristic spreads that are at the core of this entire 'discussion' and the nightmare that is JFET design?
- Changing the resistance in the drain changes the gain of the stage. Period. I couldn't care less what the value of the trim actually is - though the end user certainly will as it is one entire half of the gain equation (Av=gm*Rd; Rs bypassed); and as JFETs vary so much, it is virtually guaranteed that in order to get the same voltage on the drain as that stated in the original design, the trim will have to have different values for separate, but conceptually identical, circuits. Therefore the gain of the circuit built by the designer will almost assuredly be quite different from the gain of another stage built by someone else, even though they are using the same part number and the exact same circuit. Put it this way - if it so happens that they DO match and the values are the EXACT same for the same bias condition in each case, that's the day someone needs to buy a damn lottery ticket.
- Setting Vgs to that suggested in the Fetzer Valve article to achieve the triode 'three-halves' transfer curve is great - until you apply a signal at the gate and completely change the bias relationship that got you to the three-halves situation in the first place. Because it is set to operate in the saturation region, and never in the ohmic region, Id is controlled exclusively by Vgs, Vds has little to no effect. Because of this, the standard Vgs vs. Id transfer curve (instead of the Vds vs. Id with plots for varying Vgs) is the relationship between Vgs and Id. So unless the coefficients presented are able to physically change the transfer curve, you still have the same JFET transfer curve, not a triode transfer curve, and still have a JFET amplifier. Also, even if Danyuk's paper is entirely correct, and everything works exactly as stated, all that is achieved is a linearly operated JFET simulating a linearly operated triode - which may be great for those hi-fi folks still hanging on the tubes but sick of getting shocked, but it is absolutely useless to a guitarist seaching for even the minimum amount of distortion - at some point, the signal HAS TO clip, or at the very least enter the ohmic region, for that type of distortion to occur, and it is at that exact point the entire reason for setting up the bias according to Danyuk is nullified.
- I never advocated a trimmer on the source, in fact, I never advocated anything except that a trim in the drain to adjust the quiescent drain voltage is wrong.
- One difference between this 'parlor trick' and the standard drain trim 'parlor trick' (please note that these are not my words or phrases, I'm using them for continuity) is that in this situation, unless the resistance of the trim is maxxed, you are immediately adding noise through series resistance, as well as attenuating the signal through voltage division between the portion of the trim from the wiper to the load and the load itself - the signal passed to the next stage, no matter what that stage is, occurs at the juncture between the two. Admittedly, if the load is high, such as a buffer or another FET stage, the attenuation is small, but the added noise won't go away. If the next stage is a BJT common emitter amplifier, chances are, there will be a fair amount of attenuation in addition to the noise, with the end result being a reduction in the S/N ratio even if any loss of gain is made up by the BJT stage.
- The portion of the trim between the wiper and the load adds to the load, being in series with the load, changing the effective drain resistance as the two together (the resistance from the wiper to the load and the load itself) are in parallel with the portion from the wiper to V+. So in this case not only are you changing Rd, the physical resistance between Vdd and the drain, but you are also changing the effective load on the stage at the same time, which also changes the effective drain resistance. This also limits the JFET stage's ability to charge and discharge any following stage's Miller capacitance reducing the frequency response and changing the way the following stage reacts to clipping - which will be slightly different at every setting of the trim and therefore another variable has been added, making the circuit even harder to replicate.
- The way to properly bias a JFET stage from a single voltage supply while keeping the gain structure as replicatable as possible is via Vgs - and there is a very old 'parlor trick' that does just that with a minimal amount of fuss. Biasing via Vgs does introduce the mirror issue of differences in gm from JFET to JFET, which are at the heart of the variation between single JFETs. However, the effect of gm variation between JFETs of the same type is less than that of physically varying a multiple kiloohm Rd, all other things being equal. Nothing is going to be perfect, especially with JFETs, or, as R.G. said, we would see a lot more JFET based consumer equipment.
Regards,
Jay Doyle